STP310N10F7
- Mfr.Part #
- STP310N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N CH 100V 180A TO-220
- Stock
- 3,960
- In Stock :
- 3,960
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 60A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Turn On Delay Time :
- 62 ns
- Length :
- 10.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 12800pF @ 25V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- STP310
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 180A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Height :
- 15.75mm
- Pulsed Drain Current-Max (IDM) :
- 720A
- Additional Feature :
- ULTRA LOW RESISTANCE
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 148 ns
- Radiation Hardening :
- No
- Rise Time :
- 108ns
- Vgs(th) (Max) @ Id :
- 3.8V @ 250μA
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 315W
- Fall Time (Typ) :
- 40 ns
- Resistance :
- 2.7MOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- DeepGATE™, STripFET™ VII
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Width :
- 4.6mm
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Threshold Voltage :
- 3.5V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 315W Tc
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Datasheets
- STP310N10F7

N-Channel Tube 2.7m Ω @ 60A, 10V ±20V 12800pF @ 25V 180nC @ 10V TO-220-3
STP310N10F7 Description
STP310N10F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 100V. This device uses a novel gate structure and the ST's proprietary STripFETTM technology's 7th generation of design guidelines. The Power MOSFET that results has the lowest RDS(on) among all packages.
STP310N10F7 Features
-
Ultra low on-resistance
-
100% avalanche tested
STP310N10F7 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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