STP32N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Pin Count :

3

Power Dissipation :

150W

Turn On Delay Time :

53 ns

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 100V

Pbfree Code :

yes

Continuous Drain Current (ID) :

24A

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Width :

4.6mm

Additional Feature :

AVALANCHE ENERGY RATED

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Height :

15.75mm

Turn-Off Delay Time :

53 ns

Transistor Element Material :

SILICON

Series :

MDmesh™ V

Number of Elements :

1

Number of Pins :

3

Vgs (Max) :

±25V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

119m Ω @ 12A, 10V

Pulsed Drain Current-Max (IDM) :

96A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Resistance :

119mOhm

Mounting Type :

Through Hole

Power Dissipation-Max :

150W Tc

Lead Free :

Lead Free

Rise Time :

12ns

Fall Time (Typ) :

16 ns

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

650 mJ

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

4V

ECCN Code :

EAR99

Length :

10.4mm

Base Part Number :

STP32N

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

650V

Gate to Source Voltage (Vgs) :

25V