STP30NF10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

45mOhm

Base Part Number :

STP30N

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Width :

4.6mm

Case Connection :

DRAIN

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Contact Plating :

Tin

Lead Free :

Lead Free

ECCN Code :

EAR99

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Radiation Hardening :

No

Mount :

Through Hole

Fall Time (Typ) :

10 ns

Number of Elements :

1

FET Type :

N-Channel

Rise Time :

40ns

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

35A

Vgs (Max) :

±20V

Turn-Off Delay Time :

45 ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 15A, 10V

Current Rating :

35A

Power Dissipation-Max :

115W Tc

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

9.15mm

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Series :

STripFET™ II

Pin Count :

3

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

275 mJ

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

15 ns

Power Dissipation :

115W

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Number of Terminations :

3

Factory Lead Time :

12 Weeks