STP30N20
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- Mfr.Part #
- STP30N20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 30A TO220AB
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 200V
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Series :
- STripFET™
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 200V
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 30A
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Power Dissipation-Max :
- 125W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Base Part Number :
- STP30N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Pin Count :
- 3
- Current Rating :
- 30A
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 15A, 10V
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 15.7ns
- Power Dissipation :
- 125W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1597pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 120A
- Drain-source On Resistance-Max :
- 0.075Ohm
- Package / Case :
- TO-220-3
- Datasheets
- STP30N20
N-Channel Tube 75m Ω @ 15A, 10V 1597pF @ 25V 38nC @ 10V TO-220-3
STP30N20 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 140 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1597pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 120A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.
STP30N20 Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 120A.
STP30N20 Applications
There are a lot of STMicroelectronics
STP30N20 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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