STP30NM30N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ II

Turn On Delay Time :

25 ns

Fall Time (Typ) :

25 ns

Power Dissipation :

160W

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

900 mJ

Continuous Drain Current (ID) :

30A

Pin Count :

3

Resistance :

90mOhm

Number of Terminations :

3

Package / Case :

TO-220-3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Rise Time :

25ns

Lead Free :

Lead Free

Turn-Off Delay Time :

65 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

160W Tc

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Number of Pins :

3

Mount :

Through Hole

Packaging :

Tube

Base Part Number :

STP30N

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Height :

15.75mm

Rds On (Max) @ Id, Vgs :

90m Ω @ 15A, 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

300V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-65°C~150°C TJ

Length :

10.4mm

Width :

4.6mm

Element Configuration :

Single

Threshold Voltage :

3V

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V