STP30N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

139m Ω @ 11A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Power Dissipation-Max :

140W Tc

Rise Time :

8ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Base Part Number :

STP30N

Series :

MDmesh™ V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Packaging :

Tube

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Pulsed Drain Current-Max (IDM) :

88A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Turn-Off Delay Time :

50 ns

Additional Feature :

AVALANCHE ENERGY RATED

Avalanche Energy Rating (Eas) :

500 mJ

Mounting Type :

Through Hole

Number of Terminations :

3

Fall Time (Typ) :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Terminal Position :

Single

Radiation Hardening :

No

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

650V

Height :

15.75mm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Number of Pins :

3

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 100V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn On Delay Time :

50 ns

JEDEC-95 Code :

TO-220AB

Width :

4.6mm

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation :

140W

FET Type :

N-Channel

Continuous Drain Current (ID) :

22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V