STP3NK100Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Power Dissipation-Max :

90W Tc

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Fall Time (Typ) :

32 ns

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Turn-Off Delay Time :

39 ns

Mounting Type :

Through Hole

Radiation Hardening :

No

Transistor Element Material :

SILICON

Height :

15.75mm

Input Capacitance (Ciss) (Max) @ Vds :

601pF @ 25V

FET Type :

N-Channel

Number of Elements :

1

Width :

4.6mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

1kV

Operating Temperature :

-55°C~150°C TJ

Rise Time :

7.5ns

Drain to Source Voltage (Vdss) :

1000V

Vgs (Max) :

±30V

Base Part Number :

STP3N

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Threshold Voltage :

3.75V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Length :

10.4mm

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Drain-source On Resistance-Max :

6Ohm

Turn On Delay Time :

15 ns

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

6 Ω @ 1.25A, 10V

Power Dissipation :

90W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

12.5A

Packaging :

Tube

Mount :

Through Hole

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

SuperMESH™

Number of Pins :

3