STP3NB100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

3A

Power Dissipation :

100W

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

6Ohm

Drain to Source Breakdown Voltage :

1kV

Rds On (Max) @ Id, Vgs :

6 Ω @ 1.5A, 10V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

RoHS Status :

Non-RoHS Compliant

Base Part Number :

STP3N

Element Configuration :

Single

Continuous Drain Current (ID) :

3A

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

1kV

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Rise Time :

12ns

Fall Time (Typ) :

28 ns

Operating Temperature :

150°C TJ

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

12A

Series :

PowerMESH™

Vgs (Max) :

±30V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1000V

Mount :

Through Hole

Power Dissipation-Max :

100W Tc

Avalanche Energy Rating (Eas) :

244 mJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Package / Case :

TO-220-3