STP3N80K5
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- Mfr.Part #
- STP3N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.5A TO220
- Stock
- 3,278
- In Stock ：
- 3,278
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 15.75mm
- Width :
- 4.6mm
- Packaging :
- Tube
- Fall Time (Typ) :
- 25 ns
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Turn-Off Delay Time :
- 20.5 ns
- Drain to Source Voltage (Vdss) :
- 800V
- Continuous Drain Current (ID) :
- 2.5A
- Length :
- 10.4mm
- Base Part Number :
- STP3N
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 60W Tc
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 800V
- Package / Case :
- TO-220-3
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Rise Time :
- 7.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Case Connection :
- DRAIN
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Series :
- SuperMESH5™
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 130pF @ 100V
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 8.5 ns
- Mount :
- Through Hole
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 1A, 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 329.988449mg
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Datasheets
- STP3N80K5
N-Channel Tube 3.5 Ω @ 1A, 10V 130pF @ 100V 9.5nC @ 10V 800V TO-220-3
STP3N80K5 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 65 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 130pF @ 100V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 20.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP3N80K5 Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 2.5A
the turn-off delay time is 20.5 ns
a 800V drain to source voltage (Vdss)
STP3N80K5 Applications
There are a lot of STMicroelectronics
STP3N80K5 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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