STP3N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.6mm

Rise Time :

6.8ns

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

Drain to Source Breakdown Voltage :

620V

Number of Pins :

3

Power Dissipation :

45W

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Length :

10.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Radiation Hardening :

No

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Single

Series :

SuperMESH3™

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-220-3

Operating Temperature :

150°C TJ

Nominal Vgs :

3.75 V

Avalanche Energy Rating (Eas) :

100 mJ

Height :

15.75mm

Pulsed Drain Current-Max (IDM) :

10.8A

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.4A, 10V

ECCN Code :

EAR99

Resistance :

2.5Ohm

Pin Count :

3

Turn On Delay Time :

9 ns

REACH SVHC :

No SVHC

FET Type :

N-Channel

Power Dissipation-Max :

45W Tc

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

385pF @ 25V

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Fall Time (Typ) :

15.6 ns

Turn-Off Delay Time :

22 ns

Base Part Number :

STP3N

Packaging :

Tube

Continuous Drain Current (ID) :

2.7A