STP3N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

29.3nC @ 10V

Series :

PowerMESH™

Continuous Drain Current (ID) :

2.5A

Length :

10.4mm

Rise Time :

47ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Pin Count :

3

Power Dissipation-Max :

140W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Base Part Number :

STP3N

Input Capacitance (Ciss) (Max) @ Vds :

939pF @ 25V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Resistance :

9Ohm

Number of Terminations :

3

Width :

4.6mm

Drain to Source Voltage (Vdss) :

1500V

FET Type :

N-Channel

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Weight :

4.535924g

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

450 mJ

Turn On Delay Time :

24 ns

Drain to Source Breakdown Voltage :

1.5kV

REACH SVHC :

No SVHC

Number of Pins :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

45 ns

Height :

15.75mm

Rds On (Max) @ Id, Vgs :

9 Ω @ 1.3A, 10V

Packaging :

Tube

ECCN Code :

EAR99

Element Configuration :

Single

Package / Case :

TO-220-3

Fall Time (Typ) :

61 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

140W