STP3HNK90Z

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Mfr.Part #
STP3HNK90Z
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 3A TO220AB
Stock
41,442
In Stock :
41,442

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
3A
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Power Dissipation :
90W
Input Capacitance (Ciss) (Max) @ Vds :
690pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Number of Elements :
1
Power Dissipation-Max :
90W Tc
Pin Count :
3
Drain Current-Max (Abs) (ID) :
3A
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Base Part Number :
STP3HN
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
42 ns
Qualification Status :
Not Qualified
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Number of Terminations :
3
FET Type :
N-Channel
JEDEC-95 Code :
TO-220AB
Fall Time (Typ) :
27 ns
Series :
SuperMESH™
Reach Compliance Code :
not_compliant
Voltage - Rated DC :
900V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current Rating :
3A
Pulsed Drain Current-Max (IDM) :
12A
Rds On (Max) @ Id, Vgs :
4.2 Ω @ 1.5A, 10V
Rise Time :
28ns
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
200 mJ
Drain to Source Voltage (Vdss) :
800V
Drain to Source Breakdown Voltage :
900V
Mount :
Through Hole
Packaging :
Tube
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-220-3
Datasheets
STP3HNK90Z
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP3HNK90Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:STP3HN, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, STP3HNK90Z pinout, STP3HNK90Z datasheet PDF, STP3HNK90Z amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP3HNK90Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP3HNK90Z


N-Channel Tube 4.2 Ω @ 1.5A, 10V ±30V 690pF @ 25V 35nC @ 10V 800V TO-220-3

STP3HNK90Z Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 690pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.Its maximum pulsed drain current is 12A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

STP3HNK90Z Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)


STP3HNK90Z Applications


There are a lot of STMicroelectronics
STP3HNK90Z applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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