STP38N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

15.75mm

Series :

MDmesh™ V

Operating Temperature :

150°C TJ

Power Dissipation :

190W

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

95m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

660 mJ

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

650V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STP38N

Power Dissipation-Max :

190W Tc

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Radiation Hardening :

No

Transistor Application :

SWITCHING

Case Connection :

Isolated

Packaging :

Tube

Length :

10.4mm

Factory Lead Time :

17 Weeks

Current - Continuous Drain (Id) @ 25°C :

30A Tc

ECCN Code :

EAR99

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 100V

Number of Elements :

1

Turn-Off Delay Time :

66 ns

Turn On Delay Time :

66 ns

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-220-3

Mount :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9ns

Number of Pins :

3

Resistance :

95mOhm

Width :

4.6mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Mounting Type :

Through Hole