STP36NF06L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

13 ns

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Height :

9.15mm

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Length :

10.4mm

Continuous Drain Current (ID) :

30A

Factory Lead Time :

12 Weeks

Current Rating :

30A

Mounting Type :

Through Hole

Turn On Delay Time :

10 ns

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Series :

STripFET™ II

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

RoHS Status :

ROHS3 Compliant

Rise Time :

80ns

Base Part Number :

STP36N

Turn-Off Delay Time :

19 ns

JESD-609 Code :

e3

Vgs (Max) :

±18V

Rds On (Max) @ Id, Vgs :

40m Ω @ 15A, 10V

Case Connection :

DRAIN

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

225 mJ

Transistor Application :

SWITCHING

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

18V

Voltage - Rated DC :

60V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Threshold Voltage :

2.5V

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Power Dissipation :

70W

Mount :

Through Hole

Power Dissipation-Max :

70W Tc

Resistance :

32mOhm

Lead Free :

Lead Free

Width :

4.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

REACH SVHC :

No SVHC