STP36N55M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 100V

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.08Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.6mm

Gate to Source Voltage (Vgs) :

25V

Height :

15.75mm

Turn On Delay Time :

56 ns

Continuous Drain Current (ID) :

33A

Factory Lead Time :

17 Weeks

Drain to Source Breakdown Voltage :

550V

Series :

MDmesh™ V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Length :

10.4mm

Vgs (Max) :

±25V

Power Dissipation :

190W

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

80m Ω @ 16.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Operating Temperature :

150°C TJ

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Package / Case :

TO-220-3

Number of Elements :

1

Base Part Number :

STP36N

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mount :

Through Hole

Turn-Off Delay Time :

56 ns

Case Connection :

DRAIN

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Element Configuration :

Single

Power Dissipation-Max :

190W Tc