STP360N4F6
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- Mfr.Part #
- STP360N4F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO220
- Stock
- 696
- In Stock ：
- 696
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Height :
- 15.75mm
- Packaging :
- Tube
- Length :
- 10.4mm
- Power Dissipation :
- 300W
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drain to Source Breakdown Voltage :
- 40V
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 60A, 10V
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 17930pF @ 25V
- Radiation Hardening :
- No
- Base Part Number :
- STP360
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 340nC @ 10V
- Power Dissipation-Max :
- 300W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Width :
- 4.6mm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 120A
- Resistance :
- 1.8MOhm
- Datasheets
- STP360N4F6
N-Channel Tube 1.8m Ω @ 60A, 10V ±20V 17930pF @ 25V 340nC @ 10V TO-220-3
STP360N4F6 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 17930pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP360N4F6 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
STP360N4F6 Applications
There are a lot of STMicroelectronics
STP360N4F6 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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