STP35N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Package / Case :

TO-220-3

Pin Count :

3

JESD-609 Code :

e3

Series :

MDmesh™ V

Packaging :

Tube

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

60 ns

Continuous Drain Current (ID) :

27A

Transistor Element Material :

SILICON

Height :

15.75mm

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Threshold Voltage :

4V

Case Connection :

Isolated

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Vgs (Max) :

±25V

Turn-Off Delay Time :

60 ns

Mounting Type :

Through Hole

Rise Time :

12ns

Power Dissipation :

160W

Fall Time (Typ) :

16 ns

REACH SVHC :

No SVHC

Length :

10.4mm

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STP35N

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

650V

Moisture Sensitivity Level (MSL) :

Not Applicable

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3750pF @ 100V

Number of Terminations :

3

Element Configuration :

Single

Transistor Application :

SWITCHING

Width :

4.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

98mOhm

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

800 mJ

Power Dissipation-Max :

160W Tc

Rds On (Max) @ Id, Vgs :

98m Ω @ 13.5A, 10V