STP34NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

111 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Gate to Source Voltage (Vgs) :

25V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

150°C TJ

Element Configuration :

Single

Number of Pins :

3

Base Part Number :

STP34N

Number of Terminations :

3

Length :

10.4mm

Power Dissipation-Max :

190W Tc

Transistor Application :

SWITCHING

Mount :

Through Hole

FET Type :

N-Channel

Pin Count :

3

JESD-609 Code :

e3

Resistance :

110mOhm

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

80.4nC @ 10V

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

29A

Current - Continuous Drain (Id) @ 25°C :

29A Tc

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Series :

FDmesh™ II

Power Dissipation :

190W

Turn On Delay Time :

30 ns

Height :

15.75mm

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Packaging :

Tube

Threshold Voltage :

4V

ECCN Code :

EAR99

Width :

4.6mm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

110m Ω @ 14.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2785pF @ 50V

Number of Elements :

1

Rise Time :

53.4ns

Fall Time (Typ) :

61.8 ns

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Vgs (Max) :

±25V

Mounting Type :

Through Hole

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA