STP34N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Continuous Drain Current (ID) :

28A

Number of Pins :

3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 100V

Length :

10.4mm

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

62.5nC @ 10V

Lead Free :

Lead Free

Packaging :

Tube

Turn-Off Delay Time :

59 ns

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

25V

Resistance :

110mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Turn On Delay Time :

59 ns

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

190W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

110m Ω @ 14A, 10V

Power Dissipation :

190W

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Height :

15.75mm

Mounting Type :

Through Hole

Width :

4.6mm

Series :

MDmesh™ V

Package / Case :

TO-220-3

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

650V

Mount :

Through Hole

Base Part Number :

STP34N