STP33N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

41.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

650V

Number of Terminations :

3

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Width :

4.6mm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

24A

Element Configuration :

Single

Turn-Off Delay Time :

72.5 ns

Base Part Number :

STP33N

Packaging :

Tube

Vgs (Max) :

±25V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

140m Ω @ 12A, 10V

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

96A

Height :

15.75mm

FET Type :

N-Channel

Mounting Type :

Through Hole

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1790pF @ 100V

Drain-source On Resistance-Max :

0.14Ohm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

150°C TJ

Factory Lead Time :

16 Weeks

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

190W Tc

Avalanche Energy Rating (Eas) :

780 mJ

Gate to Source Voltage (Vgs) :

25V

Case Connection :

DRAIN

Turn On Delay Time :

13.5 ns

Series :

MDmesh™ M2

Package / Case :

TO-220-3