STP33N60M2
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- Mfr.Part #
- STP33N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO220
- Stock
- 3,367
- In Stock ：
- 3,367
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 9 ns
- Packaging :
- Tube
- Turn On Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 26A
- Number of Channels :
- 1
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 45.5nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1781pF @ 100V
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Rise Time :
- 9.6ns
- Drain to Source Breakdown Voltage :
- 600V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Weight :
- 329.988449mg
- Turn-Off Delay Time :
- 109 ns
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STP33N
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Power Dissipation-Max :
- 190W Tc
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 13A, 10V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Series :
- MDmesh™ II Plus
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 190W
- Datasheets
- STP33N60M2
N-Channel Tube 125m Ω @ 13A, 10V ±25V 1781pF @ 100V 45.5nC @ 10V TO-220-3
STP33N60M2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1781pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 109 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STP33N60M2 Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 109 ns
STP33N60M2 Applications
There are a lot of STMicroelectronics
STP33N60M2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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