STP33N60DM2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Pins :

3

Power Dissipation-Max :

190W Tc

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

MDmesh™ DM2

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Rds On (Max) @ Id, Vgs :

130m Ω @ 12A, 10V

Number of Elements :

1

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STP33N

Avalanche Energy Rating (Eas) :

570 mJ

Packaging :

Tube

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

96A

Mounting Type :

Through Hole

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Continuous Drain Current (ID) :

24A

REACH SVHC :

No SVHC

Vgs (Max) :

±25V

Operating Temperature :

-55°C~150°C TJ