STGPL6NC60D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Switching Energy :

46.5μJ (on), 23.5μJ (off)

Number of Elements :

1

Max Power Dissipation :

56W

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Max Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

600V

JESD-30 Code :

R-PSFM-T3

Current - Collector (Ic) (Max) :

14A

Transistor Application :

POWER CONTROL

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mounting Type :

Through Hole

Packaging :

Tube

Test Condition :

390V, 3A, 10 Ω, 15V

Package / Case :

TO-220-3

Turn On Time :

10.5 ns

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

5.75V

Terminal Finish :

Matte Tin (Sn)

Max Collector Current :

42A

Input Type :

Standard

Base Part Number :

STGPL6

Transistor Element Material :

SILICON

Series :

PowerMESH™

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

N-Channel

Gate Charge :

12nC

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 3A

Radiation Hardening :

No

Reverse Recovery Time :

50ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

18A

Td (on/off) @ 25°C :

6.7ns/46ns

JESD-609 Code :

e3

Number of Terminations :

3

Turn Off Time-Nom (toff) :

122 ns

Pin Count :

3