STGP7NB60KD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 7A

Collector Emitter Breakdown Voltage :

600V

Max Collector Current :

14A

Collector Emitter Voltage (VCEO) :

600V

Current Rating :

7A

Test Condition :

480V, 7A, 10 Ω, 15V

Series :

PowerMESH™

Packaging :

Tube

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Switching Energy :

140μJ (off)

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Operating Temperature :

150°C TJ

Reach Compliance Code :

not_compliant

Turn On Time :

21 ns

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mount :

Through Hole

Gate Charge :

32.7nC

Power Dissipation :

80W

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

56A

Collector Emitter Saturation Voltage :

2.8V

JEDEC-95 Code :

TO-220AB

Transistor Application :

POWER CONTROL

Max Power Dissipation :

80W

Gate-Emitter Thr Voltage-Max :

7V

Reverse Recovery Time :

50ns

Td (on/off) @ 25°C :

15ns/50ns

Element Configuration :

Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

STGP7

Voltage - Rated DC :

600V

Qualification Status :

Not Qualified

Turn Off Time-Nom (toff) :

202 ns