STGP6NC60H

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 3A

JESD-609 Code :

e3

Package / Case :

TO-220-3

Switching Energy :

20μJ (on), 68μJ (off)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Voltage - Rated DC :

600V

Number of Elements :

1

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

600V

Turn Off Time-Nom (toff) :

222 ns

JEDEC-95 Code :

TO-220AB

Gate-Emitter Voltage-Max :

20V

Power Dissipation :

56W

Reverse Recovery Time :

21 ns

Packaging :

Tube

Length :

10.4mm

Series :

PowerMESH™

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Turn On Time :

17.3 ns

Width :

4.6mm

Current Rating :

15A

Input Type :

Standard

Gate Charge :

13.6nC

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Number of Terminations :

3

Base Part Number :

STGP6

Radiation Hardening :

No

Number of Pins :

3

Max Collector Current :

15A

Turn On Delay Time :

12 ns

Transistor Application :

POWER CONTROL

Collector Emitter Saturation Voltage :

1.9V

Test Condition :

390V, 3A, 10 Ω, 15V

ECCN Code :

EAR99

Max Power Dissipation :

56W

Td (on/off) @ 25°C :

12ns/76ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

600V

Rise Time :

5ns

Mount :

Through Hole

Height :

9.15mm

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Element Configuration :

Single

Turn-Off Delay Time :

76 ns

Current - Collector Pulsed (Icm) :

21A

Gate-Emitter Thr Voltage-Max :

5.75V