STGP4M65DF2
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- Mfr.Part #
- STGP4M65DF2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT M SERIES 650V 4A LOW LOSS
- Stock
- 1,503
- In Stock ：
- 1,503
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- IGBT Type :
- Trench Field Stop
- Test Condition :
- 400V, 4A, 47 Ω, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 16A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Switching Energy :
- 40μJ (on), 136μJ (off)
- Td (on/off) @ 25°C :
- 12ns/86ns
- Power - Max :
- 68W
- Current - Collector (Ic) (Max) :
- 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Operating Temperature :
- -55°C~175°C TJ
- Input Type :
- Standard
- Reverse Recovery Time :
- 133ns
- Base Part Number :
- STGP4
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Gate Charge :
- 15.2nC
- Factory Lead Time :
- 30 Weeks
- Mounting Type :
- Through Hole
- Series :
- M
- Datasheets
- STGP4M65DF2
STGP4M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGP4M65DF2 Description
This STGP4M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGP4M65DF2 is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VcE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGP4M65DF2 Features
6 μs of short-circuit withstand time
VcE(sat)= 1.6 V (typ.) @Ic=4A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
STGP4M65DF2 Applications
Motor control
UPS
PFC
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