STGP3NB60KD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Series :

PowerMESH™

Input Type :

Standard

JESD-609 Code :

e3

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

14ns/33ns

Turn On Time :

19 ns

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

14nC

Max Collector Current :

10A

Max Power Dissipation :

50W

Polarity/Channel Type :

N-Channel

Pin Count :

3

Gate-Emitter Voltage-Max :

20V

Continuous Drain Current (ID) :

6A

Reverse Recovery Time :

45 ns

Base Part Number :

STGP3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Packaging :

Tube

Collector Emitter Saturation Voltage :

2.8V

Operating Temperature :

150°C TJ

Package / Case :

TO-220-3

Turn Off Time-Nom (toff) :

220 ns

Current Rating :

6A

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

24A

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

not_compliant

Gate-Emitter Thr Voltage-Max :

7V

Number of Terminations :

3

Number of Pins :

3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

600V

Power Dissipation :

50W

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 3A

Test Condition :

480V, 3A, 10 Ω, 15V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Switching Energy :

30μJ (on), 58μJ (off)

Collector Emitter Voltage (VCEO) :

2.8V

Number of Elements :

1