STGP3NB60F

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.4V

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Gate Charge :

16nC

Lead Free :

Contains Lead

Number of Elements :

1

Mount :

Through Hole

Input Type :

Standard

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

Motor Control

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

25W

Current Rating :

3A

Turn On Time :

16.5 ns

Switching Energy :

125μJ (off)

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Test Condition :

480V, 3A, 10 Ω, 15V

Power - Max :

68W

Number of Terminations :

3

Max Collector Current :

6A

Pin Count :

3

Turn Off Time-Nom (toff) :

535 ns

Current - Collector Pulsed (Icm) :

24A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Base Part Number :

STGP3

Rise Time :

60ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Series :

PowerMESH™

Gate-Emitter Voltage-Max :

20V

Voltage - Rated DC :

600V

JESD-30 Code :

R-PSFM-T3

Gate-Emitter Thr Voltage-Max :

5V

Max Power Dissipation :

68W

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

1.9V

Reverse Recovery Time :

45 ns

Td (on/off) @ 25°C :

12.5ns/105ns

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)