STGP30V60DF

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Case Connection :

COLLECTOR

Element Configuration :

Single

Switching Energy :

383μJ (on), 233μJ (off)

Td (on/off) @ 25°C :

45ns/189ns

Reverse Recovery Time :

53ns

Max Collector Current :

60A

Width :

4.6mm

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

120A

Power Dissipation :

258W

Turn Off Time-Nom (toff) :

225 ns

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Turn On Time :

59 ns

Mounting Type :

Through Hole

Input Type :

Standard

Packaging :

Tube

Gate Charge :

163nC

Collector Emitter Breakdown Voltage :

600V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Package / Case :

TO-220-3

Test Condition :

400V, 30A, 10 Ω, 15V

IGBT Type :

Trench Field Stop

Factory Lead Time :

20 Weeks

Collector Emitter Saturation Voltage :

2.35V

Number of Elements :

1

Number of Pins :

3

Height :

15.75mm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

Length :

10.4mm

JEDEC-95 Code :

TO-220AB

Base Part Number :

STGP30

Max Power Dissipation :

258W

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A