STGP30NC60K
- Mfr.Part #
- STGP30NC60K
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 185W TO220AB
- Stock
- 19,774
- In Stock :
- 19,774
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Polarity/Channel Type :
- N-Channel
- Max Collector Current :
- 60A
- Turn Off Time-Nom (toff) :
- 290 ns
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Gate-Emitter Voltage-Max :
- 20V
- Test Condition :
- 480V, 20A, 10 Ω, 15V
- Max Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 125A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- POWER CONTROL
- Number of Elements :
- 1
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 20A
- Turn On Time :
- 41 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 600V
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Turn-Off Delay Time :
- 120 µs
- Packaging :
- Tube
- Turn On Delay Time :
- 29 ns
- Qualification Status :
- Not Qualified
- Switching Energy :
- 350μJ (on), 435μJ (off)
- Max Power Dissipation :
- 185W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- PowerMESH™
- Number of Terminations :
- 3
- Gate Charge :
- 96nC
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Power - Max :
- 185W
- Pin Count :
- 3
- Td (on/off) @ 25°C :
- 29ns/120ns
- Base Part Number :
- STGP30
- Collector Emitter Breakdown Voltage :
- 600V
- Datasheets
- STGP30NC60K

STGP30NC60K datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGP30NC60K Description
STGP30NC60K is a type of ultrafast IGBT developed by STMicroelectronics. It is specifically designed based on the advanced PowerMESH? process to achieve an excellent trade-off between switching performance and low on-state behavior. It is characterized by low CRES / CIES ratio (no cross conduction susceptibility) and high frequency operation. The STGP30NC60K is available in the TO-220 package to meet the board space requirements.
STGP30NC60K Features
Low CRES / CIES ratio (no cross conduction susceptibility)
High frequency operation
Available in the TO-220 package
Advanced PowerMESH? process
High switching performance
Low on-state behavior
STGP30NC60K Applications
High frequency inverters
Motor drivers
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