STGP30H60DF

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Mfr.Part #
STGP30H60DF
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 60A 260W TO220
Stock
3,024
In Stock :
3,024

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
260W
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
600V
Operating Temperature :
-40°C~175°C TJ
Td (on/off) @ 25°C :
50ns/160ns
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 30A
Max Collector Current :
60A
Test Condition :
400V, 30A, 10 Ω, 15V
ECCN Code :
EAR99
Reverse Recovery Time :
110 ns
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Collector Emitter Breakdown Voltage :
600V
Factory Lead Time :
20 Weeks
Input Type :
Standard
Packaging :
Tube
IGBT Type :
Trench Field Stop
Package / Case :
TO-220-3
Power Dissipation :
260W
Current - Collector Pulsed (Icm) :
120A
Mounting Type :
Through Hole
Switching Energy :
350μJ (on), 400μJ (off)
Collector Emitter Saturation Voltage :
2.4V
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Element Configuration :
Single
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge :
105nC
Base Part Number :
STGP30
Gate-Emitter Voltage-Max :
20V
Datasheets
STGP30H60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGP30H60DF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:STGP30, STGP30H60DF pinout, STGP30H60DF datasheet PDF, STGP30H60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGP30H60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGP30H60DF


STGP30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGP30H60DF Description

STGP30H60DF is an IGBT transistor in TO-220 package from STMicroelectronics. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. This device can be applied in Inverter, UPS, and PFC due to the following features. And its ideal operating temperature is between -40 and +175℃.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
STGP30H60DF Features

Ultrafast soft recovery antiparallel diode
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short circuit rated


STGP30H60DF Applications

Inverter
UPS
PFC
Lighting
Medical
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