STGP19NC60SD
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- Mfr.Part #
- STGP19NC60SD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 130W TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Turn Off Time-Nom (toff) :
- 535 ns
- Transistor Application :
- POWER CONTROL
- Reverse Recovery Time :
- 31 ns
- Td (on/off) @ 25°C :
- 17.5ns/175ns
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 130W
- Element Configuration :
- Single
- Max Collector Current :
- 40A
- Transistor Element Material :
- SILICON
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 175 ns
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 12A
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 600V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Power - Max :
- 130W
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Gate Charge :
- 54.5nC
- Current - Collector Pulsed (Icm) :
- 80A
- Test Condition :
- 480V, 12A, 10 Ω, 15V
- Base Part Number :
- STGP19
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 135μJ (on), 815μJ (off)
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 17.5 ns
- Case Connection :
- COLLECTOR
- Turn On Time :
- 23.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Series :
- PowerMESH™
- Datasheets
- STGP19NC60SD
STGP19NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
Description
The STGP19NC60SD is a 20 A, 600 V fast IGBT with an Ultrafast diode. This IGBT makes excellent use of the cutting-edge PowerMESHTM technology to balance switching performance and minimal on-state behavior. The insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware.
Features
-
Optimized performance for medium operating frequencies
-
IGBT co-packaged with Ultrafast freewheeling diode
-
Very low on-voltage drop (VCE(sat))
-
Minimum power losses at 5 kHz in hard switching
-
Superior on-state current density
Applications
-
Medium frequency motor drives
-
Chopper and inverters
-
Solar inverters
-
In AC and DC motor drives offering speed control
-
In UPS (Uninterruptible Power Supply) system
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