STGP19NC60KD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Gate Charge :

55nC

Number of Elements :

1

Switching Energy :

165μJ (on), 255μJ (off)

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6.5V

Base Part Number :

STGP19

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Width :

4.6mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Turn-Off Delay Time :

105 ns

Series :

PowerMESH™

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

38 ns

Turn On Delay Time :

30 ns

Transistor Application :

POWER CONTROL

Contact Plating :

Tin

Packaging :

Tube

Reverse Recovery Time :

31 ns

RoHS Status :

ROHS3 Compliant

Td (on/off) @ 25°C :

30ns/105ns

Package / Case :

TO-220-3

Length :

10.4mm

Mount :

Through Hole

Test Condition :

480V, 12A, 10 Ω, 15V

Factory Lead Time :

8 Weeks

Pin Count :

3

ECCN Code :

EAR99

Current - Collector Pulsed (Icm) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic :

2.75V @ 15V, 12A

Power - Max :

125W

Input Type :

Standard

JEDEC-95 Code :

TO-220AB

Turn Off Time-Nom (toff) :

270 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mounting Type :

Through Hole

Max Collector Current :

35A

Height :

9.15mm

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

600V

Weight :

6.000006g

Gate-Emitter Voltage-Max :

20V

Max Power Dissipation :

125W