STGF6M65DF2
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- Mfr.Part #
- STGF6M65DF2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT TRENCH 650V 12A TO220FP
- Stock
- 40
- In Stock ：
- 40
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 6A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Reverse Recovery Time :
- 140ns
- ECCN Code :
- EAR99
- Td (on/off) @ 25°C :
- 15ns/90ns
- IGBT Type :
- Trench Field Stop
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Input Type :
- Standard
- Switching Energy :
- 36μJ (on), 200μJ (off)
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 24A
- Factory Lead Time :
- 30 Weeks
- Series :
- M
- Base Part Number :
- STGF6
- Current - Collector (Ic) (Max) :
- 12A
- Power - Max :
- 24.2W
- Gate Charge :
- 21.2nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Test Condition :
- 400V, 6A, 22 Ω, 15V
- Datasheets
- STGF6M65DF2
STGF6M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGF6M65DF2 Description
The STGF6M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure.
STGF6M65DF2 Features
-
6 μs of short-circuit withstand time
-
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
-
Tight parameter distribution
-
Safer paralleling
-
Low thermal resistance
-
Soft and very fast recovery antiparallel diode
STGF6M65DF2 Applications
-
General Uses
-
Industrial
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