STGF10NB60SD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Gate Charge :

33nC

Case Connection :

Isolated

ECCN Code :

EAR99

Lead Free :

Lead Free

Base Part Number :

STGF10

Max Power Dissipation :

25W

Input Type :

Standard

JESD-609 Code :

e3

Height :

20mm

Terminal Finish :

Matte Tin (Sn) - annealed

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

3100 ns

Switching Energy :

600μJ (on), 5mJ (off)

JEDEC-95 Code :

TO-220AB

Length :

10.4mm

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-220-3 Full Pack

Current Rating :

10A

Width :

4.6mm

Continuous Drain Current (ID) :

20A

Series :

PowerMESH™

Rise Time :

460ns

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

23A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

80A

Vce(on) (Max) @ Vge, Ic :

1.75V @ 15V, 10A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Radiation Hardening :

No

Mount :

Through Hole

Test Condition :

480V, 10A, 1k Ω, 15V

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

1.8V

Number of Elements :

1

Td (on/off) @ 25°C :

700ns/1.2μs

Power Dissipation :

25W

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

600V

Turn On Time :

1160 ns

Gate-Emitter Thr Voltage-Max :

5V

Collector Emitter Voltage (VCEO) :

600V

Pin Count :

3

Reverse Recovery Time :

37ns

Number of Pins :

3

Voltage - Rated DC :

600V

Transistor Application :

POWER CONTROL