STGF15H60DF

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Mfr.Part #
STGF15H60DF
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 600V 30A 30W TO220FP
Stock
18,846
In Stock :
18,846

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Height :
16.4mm
Number of Pins :
3
Gate Charge :
81nC
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Weight :
2.299997g
Length :
10.4mm
Max Power Dissipation :
30W
Collector Emitter Breakdown Voltage :
600V
Width :
4.6mm
Collector Emitter Voltage (VCEO) :
600V
Switching Energy :
136μJ (on), 207μJ (off)
IGBT Type :
Trench Field Stop
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 15A
Max Collector Current :
30A
Mounting Type :
Through Hole
Power - Max :
30W
Mount :
Through Hole
Reverse Recovery Time :
103 ns
Test Condition :
400V, 15A, 10 Ω, 15V
Current - Collector Pulsed (Icm) :
60A
Packaging :
Tube
Lead Free :
Lead Free
Element Configuration :
Single
Factory Lead Time :
20 Weeks
Td (on/off) @ 25°C :
24.5ns/118ns
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
1.6V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3 Full Pack
Base Part Number :
STGF15
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Type :
Standard
Datasheets
STGF15H60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGF15H60DF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Base Part Number:STGF15, STGF15H60DF pinout, STGF15H60DF datasheet PDF, STGF15H60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGF15H60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGF15H60DF


STGF15H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGF15H60DF Description


These devices are IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.


STGF15H60DF Features

? High speed switching
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Short-circuit rated
? Ultrafast soft recovery antiparallel diode

STGF15H60DF Applications


? Motor control
? UPS, PFC
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