STGF19NC60WD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Termination :

Through Hole

HTS Code :

8541.29.00.95

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.5V

Collector Emitter Voltage (VCEO) :

600V

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

25ns/90ns

Radiation Hardening :

No

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 12A

Max Breakdown Voltage :

600V

Max Collector Current :

14A

Mounting Type :

Through Hole

Test Condition :

390V, 12A, 10 Ω, 15V

Number of Pins :

3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Power Dissipation :

32W

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

Input Type :

Standard

Transistor Application :

Motor Control

Turn Off Time-Nom (toff) :

127 ns

Gate Charge :

53nC

Reverse Recovery Time :

32 ns

REACH SVHC :

No SVHC

Max Power Dissipation :

32W

Element Configuration :

Single

Gate-Emitter Voltage-Max :

20V

Base Part Number :

STGF19

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

25 ns

Gate-Emitter Thr Voltage-Max :

5.75V

Rise Time :

7ns

Switching Energy :

81μJ (on), 125μJ (off)

Series :

PowerMESH™