STGF10NC60KD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Voltage-Max :

20V

Reverse Recovery Time :

22 ns

JEDEC-95 Code :

TO-220AB

Collector Emitter Breakdown Voltage :

600V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Case Connection :

Isolated

JESD-609 Code :

e3

Max Power Dissipation :

25W

Td (on/off) @ 25°C :

17ns/72ns

Height :

16.4mm

Number of Terminations :

3

Turn On Delay Time :

6 ns

Collector Emitter Saturation Voltage :

2V

Switching Energy :

55μJ (on), 85μJ (off)

Input Type :

Standard

Turn Off Time-Nom (toff) :

242 ns

Test Condition :

390V, 5A, 10 Ω, 15V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

Voltage - Rated DC :

600V

Current Rating :

9A

Number of Elements :

1

Width :

4.6mm

ECCN Code :

EAR99

Rise Time :

6ns

Turn On Time :

23 ns

Turn-Off Delay Time :

6.5 ns

Gate Charge :

19nC

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

30A

Base Part Number :

STGF10

Series :

PowerMESH™

Transistor Element Material :

SILICON

Power Dissipation :

25W

REACH SVHC :

No SVHC

Max Collector Current :

9A

Length :

10.4mm

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A

Terminal Finish :

Matte Tin (Sn) - annealed

Factory Lead Time :

8 Weeks

Gate-Emitter Thr Voltage-Max :

7V

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Number of Pins :

3