STGF19NC60HD
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- Mfr.Part #
- STGF19NC60HD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 16A 32W TO220FP
- Stock
- 18,591
- In Stock ：
- 18,591
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 12A
- Turn-Off Delay Time :
- 97 ns
- JESD-609 Code :
- e3
- Switching Energy :
- 85μJ (on), 189μJ (off)
- REACH SVHC :
- No SVHC
- Height :
- 16.4mm
- Current - Collector Pulsed (Icm) :
- 60A
- Turn On Time :
- 32 ns
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Max Power Dissipation :
- 32W
- Turn Off Time-Nom (toff) :
- 272 ns
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 600V
- Gate-Emitter Voltage-Max :
- 20V
- Width :
- 4.6mm
- Collector Emitter Breakdown Voltage :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.8V
- Length :
- 10.4mm
- Transistor Application :
- POWER CONTROL
- Continuous Drain Current (ID) :
- 16A
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Base Part Number :
- STGF19
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Packaging :
- Tube
- Number of Elements :
- 1
- Current Rating :
- 9A
- Input Type :
- Standard
- Power Dissipation :
- 35W
- ECCN Code :
- EAR99
- Series :
- PowerMESH™
- Number of Terminations :
- 3
- Td (on/off) @ 25°C :
- 25ns/97ns
- Turn On Delay Time :
- 25 ns
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 600V
- Number of Pins :
- 3
- Rise Time :
- 7ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Gate Charge :
- 53nC
- Drain to Source Voltage (Vdss) :
- 600V
- Max Collector Current :
- 16A
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Reverse Recovery Time :
- 31 ns
- Test Condition :
- 390V, 12A, 10 Ω, 15V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- STGF19NC60HD
STGF19NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
Description
The STGF19NC60HD is a very fast IGBT with an ultrafast diode that operates at 19 A and 600 V. The device is a high-speed IGBT. It makes use of the sophisticated Power MESHTM technology, which provides an outstanding balance of switching performance and minimal on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
? High-current
? Low-saturation-voltage capability of bipolar transistors
? High current-handling capabilities
? Low on-voltage drop (VCE(sat))
? Very soft ultrafast recovery anti-parallel diode
Applications
? High-frequency motor drives
? SMPS and PFC in both hard switch and resonant topologies
? Power transistor
? Switched-mode power supplies
? Traction motor control
? Induction heating
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