STGD7NC60HT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-252AA

Test Condition :

390V, 7A, 10 Ω, 15V

Turn On Delay Time :

18.5 ns

Base Part Number :

STGD7

Max Breakdown Voltage :

600V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.5V

Power Dissipation :

70W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Voltage - Rated DC :

600V

Collector Emitter Voltage (VCEO) :

600V

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

70W

Weight :

3.949996g

Turn On Time :

25.5 ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Turn Off Time-Nom (toff) :

221 ns

Current - Collector Pulsed (Icm) :

50A

Input Type :

Standard

ECCN Code :

EAR99

Length :

6.6mm

Continuous Collector Current :

14A

Turn-Off Delay Time :

116 ns

Series :

PowerMESH™

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 7A

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Rise Time :

8.5ns

JESD-30 Code :

R-PSSO-G2

Width :

6.2mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Switching Energy :

95μJ (on), 115μJ (off)

Current Rating :

7A

Pin Count :

3

Gate Charge :

35nC

Gate-Emitter Thr Voltage-Max :

5.75V

Number of Elements :

1

Number of Terminations :

2

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

18.5ns/72ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Height :

2.4mm

Factory Lead Time :

8 Weeks

Number of Pins :

3

Max Collector Current :

25A

Transistor Application :

POWER CONTROL