STGD10NC60ST4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

19ns/160ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Gate-Emitter Voltage-Max :

20V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - annealed

Max Power Dissipation :

60W

Gate-Emitter Thr Voltage-Max :

5.75V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Switching Energy :

60μJ (on), 340μJ (off)

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Turn On Time :

22.5 ns

Series :

PowerMESH™

Vce(on) (Max) @ Vge, Ic :

1.65V @ 15V, 5A

Transistor Application :

Motor Control

Turn Off Time-Nom (toff) :

560 ns

Number of Pins :

3

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Test Condition :

390V, 5A, 10 Ω, 15V

Base Part Number :

STGD10

Number of Terminations :

2

Input Type :

Standard

Current - Collector Pulsed (Icm) :

25A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Packaging :

Cut Tape (CT)

Number of Elements :

1

Max Breakdown Voltage :

600V

Max Collector Current :

18A

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Terminal Form :

Gull wing

Power - Max :

60W

Gate Charge :

18nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

600V