STGD10HF60KD

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Mfr.Part #
STGD10HF60KD
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 10A DPAK
Stock
2,840
In Stock :
2,840

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Switching Energy :
45μJ (on), 105μJ (off)
Gate-Emitter Thr Voltage-Max :
6.5V
Current - Collector Pulsed (Icm) :
30A
Collector Emitter Breakdown Voltage :
600V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Cut Tape (CT)
Base Part Number :
STGD10
Td (on/off) @ 25°C :
9.5ns/87ns
Mounting Type :
Surface Mount
Max Power Dissipation :
62.5W
Collector Emitter Voltage (VCEO) :
2.75V
Gate Charge :
23nC
Input Type :
Standard
Mount :
Surface Mount
Terminal Finish :
Matte Tin (Sn) - annealed
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JESD-609 Code :
e3
Factory Lead Time :
8 Weeks
RoHS Status :
ROHS3 Compliant
Reverse Recovery Time :
50 ns
Reach Compliance Code :
not_compliant
Vce(on) (Max) @ Vge, Ic :
2.75V @ 15V, 5A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Test Condition :
400V, 5A, 10 Ω, 15V
Max Collector Current :
18A
Gate-Emitter Voltage-Max :
20V
Power - Max :
62.5W
Series :
Automotive, AEC-Q101
Polarity/Channel Type :
N-Channel
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Max Breakdown Voltage :
600V
Datasheets
STGD10HF60KD
Introducing Transistors - IGBTs - Single STMicroelectronics STGD10HF60KD from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STGD10, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, STGD10HF60KD pinout, STGD10HF60KD datasheet PDF, STGD10HF60KD amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGD10HF60KD ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGD10HF60KD


STGD10HF60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGD10HF60KD Description


The device STGD10HF60KD   uses advanced power mesh technology to manufacture IGBT and Turbo2 ultra-fast high voltage technology to manufacture diodes. This combination achieves a very good tradeoff between turn-on loss and switching behavior, making the product an ideal choice for a variety of high-voltage applications operating at high frequencies.

 

STGD10HF60KD   Features


? Designed for automotive applications and  AEC-Q101 qualified

? Low on-voltage drop (VCE(sat))

? Low Cres / Cies ratio (no cross conduction  susceptibility)

? Switching losses include diode recovery  energy

? Short-circuit rated

? Very soft Ultrafast recovery anti-parallel diode


STGD10HF60KD   Applications


? High frequency inverters

? SMPS and PFC in both hard switch and  resonant topologies

? Motor drives

? Injection systems


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