STGD10NC60KT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Mount :

Surface Mount

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

600V

Height :

2.4mm

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

60W

Mounting Type :

Surface Mount

Pin Count :

3

Current - Collector Pulsed (Icm) :

30A

Number of Pins :

3

Series :

PowerMESH™

Element Configuration :

Single

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Length :

6.6mm

Terminal Finish :

Matte Tin (Sn)

Weight :

350.003213mg

Switching Energy :

55μJ (on), 85μJ (off)

Number of Terminations :

2

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Test Condition :

390V, 5A, 10 Ω, 15V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

STGD10

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Max Collector Current :

20A

Turn Off Time-Nom (toff) :

242 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A

Gate-Emitter Thr Voltage-Max :

6.5V

Transistor Application :

POWER CONTROL

Gate Charge :

19nC

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

6.2mm

Additional Feature :

ULTRA FAST

Td (on/off) @ 25°C :

17ns/72ns

Number of Elements :

1

Power - Max :

60W

Turn On Time :

23 ns