STGD19N40LZ

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Mfr.Part #
STGD19N40LZ
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 20V 40A DPAK
Stock
40,189
In Stock :
40,189

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Input Type :
Logic
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins :
3
Power - Max :
125W
Series :
Automotive, AEC-Q101
Mounting Type :
Surface Mount
Width :
6.2mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge :
17nC
Current - Collector Pulsed (Icm) :
40A
Operating Temperature :
-55°C~175°C TJ
Max Breakdown Voltage :
390V
Vce(on) (Max) @ Vge, Ic :
1.5V @ 4.5V, 10A
Height :
2.4mm
Max Collector Current :
25A
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Base Part Number :
STGD19
Collector Emitter Breakdown Voltage :
390V
Factory Lead Time :
8 Weeks
Test Condition :
300V, 10A, 1k Ω, 5V
Packaging :
Cut Tape (CT)
Max Power Dissipation :
125W
Td (on/off) @ 25°C :
650ns/13.5μs
Length :
6.6mm
Collector Emitter Voltage (VCEO) :
1.5V
Lead Free :
Lead Free
Datasheets
STGD19N40LZ
Introducing Transistors - IGBTs - Single STMicroelectronics STGD19N40LZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Base Part Number:STGD19, STGD19N40LZ pinout, STGD19N40LZ datasheet PDF, STGD19N40LZ amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGD19N40LZ ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGD19N40LZ


STGD19N40LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGD19N40LZ  Description

This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between the gate collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.



STGD19N40LZ  Features

AEC-Q101 qualified

180 mJ of avalanche energy @ TC = 150 °C,L = 3 mH

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic-level gate drive

Low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor



STGD19N40LZ  Applications

Pencil coil electronic ignition driver






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