STGD10NC60SDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Number of Terminations :

2

Terminal Form :

Gull wing

Max Collector Current :

18A

Gate Charge :

18nC

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Td (on/off) @ 25°C :

19ns/160ns

Gate-Emitter Voltage-Max :

20V

Current - Collector Pulsed (Icm) :

25A

Base Part Number :

STGD10

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Breakdown Voltage :

600V

Reverse Recovery Time :

22 ns

Test Condition :

390V, 5A, 10 Ω, 15V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Pin Count :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

22.5 ns

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Additional Feature :

ULTRA FAST

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

1.65V @ 15V, 5A

Input Type :

Standard

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

560 ns

Time@Peak Reflow Temperature-Max (s) :

30

Max Power Dissipation :

60W

Gate-Emitter Thr Voltage-Max :

5.75V

Mount :

Surface Mount

Number of Pins :

3

Power - Max :

60W

Switching Energy :

60μJ (on), 340μJ (off)

Series :

PowerMESH™