STGD10NC60KDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Gate Charge :

19nC

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Max Breakdown Voltage :

600V

REACH SVHC :

No SVHC

Number of Terminations :

2

Test Condition :

390V, 5A, 10 Ω, 15V

Turn Off Time-Nom (toff) :

242 ns

Operating Temperature :

-55°C~150°C TJ

Width :

6.2mm

Polarity/Channel Type :

N-Channel

Turn On Delay Time :

17 ns

Input Type :

Standard

Length :

6.6mm

Current - Collector Pulsed (Icm) :

30A

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate-Emitter Voltage-Max :

20V

Turn On Time :

23 ns

Max Power Dissipation :

62W

Series :

PowerMESH™

Terminal Form :

Gull wing

Max Collector Current :

20A

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A

Pin Count :

3

Power - Max :

62W

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

2V

Rise Time :

6.5ns

JESD-30 Code :

R-PSSO-G2

Reverse Recovery Time :

22 ns

Height :

2.4mm

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number :

STGD10

Td (on/off) @ 25°C :

17ns/72ns

Number of Pins :

3

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Application :

POWER CONTROL

Element Configuration :

Single

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

72 ns

Collector Emitter Breakdown Voltage :

600V

ECCN Code :

EAR99

Switching Energy :

55μJ (on), 85μJ (off)