STGD3NB60SDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Form :

Gull wing

Test Condition :

480V, 3A, 1k Ω, 15V

Turn On Time :

275 ns

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Number of Pins :

3

Lead Free :

Lead Free

Current Rating :

3A

Max Collector Current :

6A

Turn On Delay Time :

125 μs

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

1.5V @ 15V, 3A

Max Breakdown Voltage :

600V

Turn-Off Delay Time :

1 μs

Switching Energy :

1.15mJ (off)

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

600V

Reverse Recovery Time :

1.7μs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

48W

Gate-Emitter Voltage-Max :

20V

Terminal Finish :

Matte Tin (Sn) - annealed

Gate Charge :

18nC

Max Power Dissipation :

48W

Voltage - Rated DC :

600V

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

1.5V

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Current - Collector Pulsed (Icm) :

25A

Factory Lead Time :

8 Weeks

Turn Off Time-Nom (toff) :

4800 ns

Series :

PowerMESH™

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Base Part Number :

STGD3

Pin Count :

3

Input Type :

Standard

Mount :

Surface Mount

Rise Time :

150μs

Gate-Emitter Thr Voltage-Max :

4.5V

Operating Temperature :

175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Td (on/off) @ 25°C :

125μs/-

ECCN Code :

EAR99