SPP18P06PHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.13Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Pulsed Drain Current-Max (IDM) :

74.4A

Number of Elements :

1

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

18.7A Ta

Series :

SIPMOS®

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

81.1W Ta

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

18.6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

JESD-30 Code :

R-PSFM-T3

Published :

2006

Mounting Type :

Through Hole

Terminal Position :

Single

Surface Mount :

No