SPP100N08S2L-07
- Mfr.Part #
- SPP100N08S2L-07
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO220-3
- Stock
- 14,054
- In Stock :
- 14,054
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 100A
- Voltage - Rated DC :
- 75V
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Terminal Finish :
- MATTE TIN
- JEDEC-95 Code :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 810 mJ
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 400A
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 100A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Pin Count :
- 3
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 7130pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- Non-RoHS Compliant
- Drain-source On Resistance-Max :
- 0.0087Ohm
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Series :
- OptiMOS™
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 246nC @ 10V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 68A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max :
- 300W Tc
- Mount :
- Through Hole
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Datasheets
- SPP100N08S2L-07

N-Channel Tube 6.8m Ω @ 68A, 10V ±20V 7130pF @ 25V 246nC @ 10V TO-220-3
SPP100N08S2L-07 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7130pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.By using drive voltage (10V), this device helps reduce its overall power consumption.
SPP100N08S2L-07 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.
SPP100N08S2L-07 Applications
There are a lot of Infineon Technologies
SPP100N08S2L-07 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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