SPP100N08S2-07
- Mfr.Part #
- SPP100N08S2-07
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO220-3
- Stock
- 30,083
- In Stock :
- 30,083
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0071Ohm
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 75V
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 100A
- Current Rating :
- 100A
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Single
- Mount :
- Through Hole
- Published :
- 2003
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 7.1m Ω @ 66A, 10V
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- OptiMOS™
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 400A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 6020pF @ 25V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Datasheets
- SPP100N08S2-07

N-Channel Tube 7.1m Ω @ 66A, 10V ±20V 6020pF @ 25V 200nC @ 10V TO-220-3
SPP100N08S2-07 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 810 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6020pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 400A.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SPP100N08S2-07 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.
SPP100N08S2-07 Applications
There are a lot of Infineon Technologies
SPP100N08S2-07 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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