SPP100N08S2-07

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Mfr.Part #
SPP100N08S2-07
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 100A TO220-3
Stock
30,083
In Stock :
30,083

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.0071Ohm
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Voltage - Rated DC :
75V
Avalanche Energy Rating (Eas) :
810 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Continuous Drain Current (ID) :
100A
Current Rating :
100A
Power Dissipation-Max :
300W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Position :
Single
Mount :
Through Hole
Published :
2003
Pin Count :
3
Rds On (Max) @ Id, Vgs :
7.1m Ω @ 66A, 10V
Number of Elements :
1
Lead Free :
Contains Lead
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Terminal Finish :
MATTE TIN
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
OptiMOS™
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
FET Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
400A
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
Non-RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
6020pF @ 25V
Packaging :
Tube
ECCN Code :
EAR99
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Datasheets
SPP100N08S2-07
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPP100N08S2-07 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, SPP100N08S2-07 pinout, SPP100N08S2-07 datasheet PDF, SPP100N08S2-07 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPP100N08S2-07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPP100N08S2-07


N-Channel Tube 7.1m Ω @ 66A, 10V ±20V 6020pF @ 25V 200nC @ 10V TO-220-3

SPP100N08S2-07 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 810 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6020pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 400A.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SPP100N08S2-07 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.


SPP100N08S2-07 Applications


There are a lot of Infineon Technologies
SPP100N08S2-07 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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